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光电二极管

产品信息
新势力光电(www.NewOpto.com)专业供应尾纤半导体激光器,尾纤激光器,单纵模激光器,单频激光器,Cobolt激光器.垂询:.

 

 
光电二极管(PIN)
 



新势力光电供应光电二极管(PIN),用于将光信号转换为电信号,形成光电效应/光电池。PIN 光电二极管应用广泛,包括: 安检设备、激光测距、运动控制、分析仪器、生物YL、光通信、军事、航空航天。

UV/blue sensitive photodiodes
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
5V
410nm 5V 50Ω
mm
mm2
nA
ns
PS1-2
TO52
1.0x1.0
1
0.01
50
PS1-2
LCC6.1
1.0x1.0
1
0.01
50
PC5-2
TO5
Ø 2.52
5
0.3
150
PS7-2
TO5
2.66x2.66
7
0.4
200
PC10-2
TO5
Ø 3.57
10
1
300
PS13-2
TO5
3.5x3.5
13
1
300
PS33-2
TO8
5.7x5.7
33
2
600
PC50-2
BNC
Ø 7.98
50
5
1000
PS100-2
BNC
10x10
100
10
2000
PS100-2
CERpin
10x10
100
10
2000
Band pass filter modules: PC10-2 TO5i with center wavelength 254nm or 300nm or 350nm
Blue/green sensitive photodiodes
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
5V
410nm 5V 50Ω
mm
mm2
nA
ns
PC1-6b
TO52S3
Ø 1.13
1
0.05
10
PC5-6b
TO5
Ø 2.52
5
0.1
20
PS7-6b
TO5
2.7x2.7
7
0.15
25
PC10-6b
TO5
Ø 3.57
10
0.2
45
PS13-6b
TO5
3.5x3.5
13
0.25
50
PS33-6b
TO8
5.7x5.7
33
0.6
140
PS100-6b
CERpin
10x10
100
1
200
PS100-6b
LCC10S
10x10
100
1
200
Band pass filter modules: PR20-6b TO5i with center wavelength 488nm or 550nm or 633nm or 680nm
High speed photodiodes (for fast rise times at low reverse voltages)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
20V
850nm 20V 50Ω
mm
mm2
nA
ns
PS0.25-5
LCC6.1
0.5x0.5
0.25
0.1
0.4
PS0.25-5
TO52S3
0.5x0.5
0.25
0.1
0.4
PC0.55-5
TO52S1
Ø 0.84
0.55
0.2
1
PC0.55-5
LCC6.1
Ø 0.84
0.55
0.2
1
PS1-5
LCC6.1
1.0x1.0
1
0.2
1.5
PS1-5
TO52S3
1.0x1.0
1
0.2
1.5
PS7-5
TO5
2.7x2.7
7
0.5
2
PS11.9-5
TO5
3.45x3.45
11.9
1
3
PC20-5
TO8
Ø 5.05
20
2
3.5
PS33-5
TO8
5.7x5.7
33
2
3.5
PS100-5
CERpinS
10x10
100
2
5
PS100-5
LCC10S
10x10
100
2
5
High speed photodiodes for low voltages (for low operating voltages between 3 and 5 V, making them ideal for VIS and NIR applications in conjunction with CMOS components)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
20V
850nm 20V 50Ω
mm
mm2
nA
ns
PS0.25-5t
LCC6.1
0.5x0.5
0.25
1
0.4
PC0.55-5t
LCC6.1
Ø 0.84
0.55
5
1
PC0.55-5t
T1 3/4
Ø 0.84
0.55
5
1
PC0.55-5t
T1 3/4 black
Ø 0.84
0.55
5
1
PS1-5t
LCC6.1
1.0x1.0
1
1
1
IR photodiodes with min. dark current (for low-capacitance light detection as well as for α, β, ϒ and X-radiation detection)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
10V
850nm 10V 50Ω
mm
mm2
nA
ns
PC1-6
TO52S1
Ø 1.13
1
0.05
10
PC1-6
TO52S3
Ø 1.13
1
0.05
10
PC5-6
TO5
Ø 2.52
5
0.1
13
PS7-6
TO5
2.66×2.66
7
0.1
15
PC10-6
TO5
Ø 3.57
10
0.2
20
PS13-6
TO5
3.5×3.5
13
0.2
20
PC20-6
TO8
Ø 5.05
20
0.3
25
PC50-6
TO8S
Ø 7.98
50
0.5
30
PS100-6
BNC
10×10
100
0.8
50
PS100-6
CERpinS
10×10
100
0.8
50
PS100-6
LCC10S
10×10
100
0.8
50
IR photodiodes with fully depletable (very low capacitance levels)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
10V
905nm 10V 50Ω
mm
mm2
nA
ns
PC5-7
TO8i
Ø 2.52
5
0.05
45
PC10-7
TO8i
Ø 3.57
10
0.1
50
PC20-7
TO8Si
Ø 5.05
20
0.2
50
PS100-7
LCC10
10×10
100
1.5
50
QP100-7
LCC10
10×10
4×25
0.5
50
Photodiodes for 1064nm (specifically for laser rangefinders, laser-based targeting systems or any applications using YAG lasers or similar NIR radiation sources)
Type No.
Active area
Dark current
Rise time
Chip
Package
Size
Area
150V
1064nm 150V 50Ω
mm
mm2
nA
ns
QP22-Q
TO8S
Ø 5.3
4×5.7
1.5
5
QP45-Q
TO8S
6.7×6.7
4×10.96
3
5
QP154-Q
TO1032i
Ø 14.0
4×38.5
10
6

PIN Series
Optimized for
Special features
Application
Series-2
200-500 nm
UV / Blue enhanced
Analytical instruments, readout for scintillators
Series-6b
400-650 nm
Blue / Green enhanced
Photometric illuminometer
Series-5b
360-550 nm
High-speed Epitaxy, blue / green enhanced
Optical fiber communication, high speed photometry
Series-5t
400-850 nm
High-speed Epitaxy, low voltage (3.5V)
Series-5
450-950 nm
High-speed Epitaxy
Series-6
700-950 nm
General purpose, low dark current, fast response
Precision photometry, analytical instruments
Series-7
700-1100 nm
Low capacity, full depletable
High energy physics
Series-Q
900-1100 nm
Enhanced NIR sensitivity, low voltage, full depletable
YAG laser detection
Series-i
600-1700 nm
InGaAs photodiodes, high IR sensitivity, low dark current
Eye-sate laser detection
Series-X
Ionizing radiation
With or without scintillator, ultra
Medical, security, material

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