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KV104-1-A-3/11 液氮制冷型红外探测器(一）

产品信息


液氮制冷型红外探测器(IR Detectors with Dewar) ---KOLMAR TECHNOLOGIES

■ KV104 Series HgCdTe Photodiodes 


◆ High D* at high frequencies

◆ Sizes 2.0 mm to 0.05 mm

◆ Wavelength cutoff: 11.5, 8, 4.5 μm

◆ Linear

◆ Custom configurations available

 

Model*


Wavelength (µm)

Peak/ Cutoff


Size(mm)


Bandwidth(Hz) 


D*(60FOV)

(Jones,typ)


Responsivity

(Amps/Watt)


KV104-1-A-3/11


10.5 />11.5


1 x 1


>20M


3.00E+10


>4


KV104-1-A-3/12


11 />12.3


1 x 1


>20M


3.00E+10


>4


KV104-1-A-3/10


9/ >10


1 x 1


>20M


5.00E+10


>4


KV104-0.5-A-3/11


10.5/ >11.5


0.5 x 0.5


>50M


3.00E+10


>4


KV104-0.25-A-1/11


10.5/ >11.5


0.25x0.25


>100M


3.00E+10


>4


KV104-0.1-1-E/11


10.5 />11.5


0.1 x 0.1


>500M


3.00E+10


>4


KV104-0.5-A-2/8


7.2 />8


0.5 x 0.5


>30M


7.00E+10


>3


KV104-1-A-7/11/TS


10.5 />11.5


1 x 1


>20M


3.00E+10


>4


KV104-1-A-5/11/TS


10.5 />11.5


1 x 1


>20M


3.00E+10


>4

■ KLD Series Linear Response MCT Detectors 

◆Linear responsivity

◆High D*

◆Sizes 2.0 mm to 0.5 mm

◆Integral amplifier for optimum linearization

◆Spectral range 2 m m to 12 m m

◆Amplifiers matched for power range

◆Custom configurations available		 

Model *


Wavelength (μm)

Peak / Cutoff


Size(mm dia.)


Bandwidth(Hz) 


D*(60FOV)

(Jones,typ) 


Responsivity

(Volts/mWatt)


KLD-1-J1-3/11


10.5 / 11.5


1


2M


4.00E+10


>40


KLD-1-J1-3/9


7.6 / 8.5


1


2M


6.00E+10


>32


KLD-0.5-J1-3/10/DC


9 /10


0.5x0.5


DC - 5M


8.00E+10


>40


KLD-0.5-J1-3/11/DC


10 / 11.5


0.5x0.5


DC - 5M


4.00E+10


>40


KLD-2-J1-3/11/DC


10.5 / 11.5


2


DC - 1M


4.00E+10


>40



■ MCT Photodiodes with Integral Amplifiers


◆High D* at high frequencies

◆Bandwidth to 100 MHz

◆Fast risetime: 3.5 ns

◆Sizes 2.0 mm to 0.1 mm

◆Wavelength cutoff: 11.5, 8, 4.5 μm

◆Linear

◆Custom configurations available

 

Model *


Wavelength (μm )

Peak / Cutoff


Size

(mm dia.)


Bandwidth

 (Hz)AC DC


D*(60FOV)

(Jones,typ)


Responsivity

(Volts/mWatt)


KMPV11-1-J1/AC


10.5 /> 11.5


1


100-20M


3.00E+10


>40


KMPV11-1-J1/DC


10.5/ > 11.5


1


DC - 20M


3.00E+10


>40


KMPV11-1-J2


10.5/ > 11.5


1


100-20M DC - 20M


3.00E+10


>40DC + 80AC


KMPV8-0.5-J2/50


  7.2 / >8


0.5 x 0.5


100-50M DC - 50M


6.00E+10


>16DC + 32AC


KMPV8-0.5-J1/DC50


  7.2 / >8


0.5 x 0.5


DC - 50M


6.00E+10


>16


KMPV11-0.5-J1/DC


10.5 / >11.5


0.5 x 0.5


DC - 20M


3.00E+10


>40


KMPV8-0.5-J1/DC


  7.2  / >8


0.5 x 0.5


DC - 20M


6.00E+10


>40


KMPV11-0.1-J1/DC100


   10.1  / >11


0.1 x 0.1


DC - 100M


2.00E+10


>16



■ Series KISD InSb Photodiodes

◆With or without integral low noise amplifiers

◆Fast rise times: 25 ns, 7 ns

◆Linear response with power

◆High detectivity

◆Custom configurations available


Model*


Size

(mm dia.)


Bandwidth

 (Hz)AC DC


D*(60FOV)

(Jones, typ)


Responsivity

nominal  


KISD-1-A-6


1



1.50E+11


3 A/W


KISD -2-A-6


2



1.50E+11


3 A/W


KISD-0.5-A-6


0.5



1.50E+11


3 A/W


KISDP-1-J1/AC


1


100-15M


1.50E+11


3 x 104 V/W


KISDP-1-J1/DC


1


   15M


1.50E+11


3 x 104 V/W


KISDP-1-J2


1


100-15M ,   15M


1.50E+11


3 x 104 V/W


KISDP-1-J2/E5


1


100-1.5M ,  1.5M


1.50E+11


3 x 105 V/W


KISDP-1-J2/E6


1


100-200k, 200k


1.50E+11


3 x 106 V/W


KISDP-1-J1/E6


1


 200k


1.50E+11


3 x 106 V/W


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