K5P10-1-J2 液氮制冷型红外探测器(二）_详细资料

产品信息

■ K5P10-1-J2 Two Color Detector-- Hybrid InSb Photodiode On MCT Photodiode

◆Top detector 1mm x1mm InSb photodiode

# Amplifier DC to 1MHz BW 40,000 V/A transimpedance

# D* > 1.0 E11 Jones

◆Bottom Detector 1mm x1mm HgCdTe photodiode Amplifier DC to 1MHz BW and 10,000 V/A transimpedance

# D* > 3 E10 Jones

# Cutoff wavelength > 11um

■ Series KMPC MCT Photoconductive Infrared Detectors

◆Nominal bandwidth 1MHz

◆350 ns rise time

◆Extended spectral range to 20 mm

◆Convenient integral amplifier

◆Low noise: 1.5dB NF

◆Custom configurations available

Model *	Wavelength(μm) Peak Cutoff	Size (mm)	Bandwidth(Hz)	D*(60FOV) (Jones, typ)	Responsivity (Volts/mWatt)
KMPCP11-1-J1	11 >12	1 x 1	1M	2.00E+10	500 with amplifier
KMPC12-2-A	12 >13	2 x 2		2.00E+10	1
KMPC12-1-A	12 >13	1 x 1		2.00E+10	3
KMPC14-1-A	14 >15	1 x 1		2.00E+10	2
KMPC16-1-A	16 >20	1 x 1		1.00E+10	1

■ Amplifiers for KV104 series HgCdTe photodiodes

Model	Type	Gain	Bandwidth	Output
KA020-A1A	TIA + bias	1E4 V/A	100 Hz 20MHz	20V p-p
KA020-A1	TIA + bias	1E4 V/A	DC 20 MHz	20 V p-p
KA050-A1	TIA + bias	4E3 V/A	DC 50 MHz	20 V p-p
KA100-A1	TIA + bias	4E3 V/A	DC 100 MHz	8 V p-p

■ Amplifiers for KMPC series HgCdTe photoconductors

Model	Type	Gain	Bandwidth	Output
KA-S3	TIA + bias	1E4/Rd V/V	20 Hz 300 kHz	20 V rms
KA-S4	TIA + bias	1E4/Rd V/V	20 Hz 500 kHz	20 V rms
KA-S5	TIA + bias	1E4/Rd V/V	20 Hz 1 MHz	20 V rms

■ Amplifiers for KISD series InSb photodiodes

Model	Type	Gain	Bandwidth	Output
KA020-C1	TIA + bias	1E4 V/A	DC 10 MHz	20 V p-p
KA05-C1	TIA + bias	5E4 V/A	DC 5 MHz	20 V p-p
KA03-C1	TIA + bias	1E5 V/A	DC 3 MHz	20 V p-p
KA01-E6-AG	Adj. gain 1-2-5-10 step+bias	1E5 1E7 V/A	DC 1 MHz	20 V p-p

■ Post Amplifiers: Gain and Line Drivers

Model	Type	Gain	Bandwidth	Output
KA100-E1	Buffer	1 V/V	DC 100 MHz*	20 V p-p
KA100-E2	Buffer	20 V/V	DC 100 MHz*	20 V p-p
KA100-E3	Buffer	2 V/V	DC 100 Hz*	20 V p-p

*AC coupled 100 Hz 100 MHz (optional)

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