供应美国Moorfield Associates 台式高通量石墨烯合成系统

Benchtop, turnkey system for high-throughput graphene synthesisFeatures

• Reproducible graphene synthesis
• Easy installation and operation
• Precise control of conditions
• Comprehensive safety features
• Process times <30 mins

Technology

• Maximum substrate size: 20mm × 40 mm
• 1100 °C maximum temperature
• Cold Wall Reactor
• Minimal chamber volume
• Low thermal-mass heater/stage assembly
• Temperature control thermocouple in close proximity to substrates

Safety Features

• Shutdown in event of pumping failure
• Heating and flammable gas flows disabled until purge routine completed
• Monitoring of thermcouple integrity; shutdown on error Dilution of flammable gases with inert gas (at pump)
• Internal temperature monitoring; shutdown if exceeds limit
• Chamber held shut until heater drops below set temperature
• Shutdown in event of unexpected pressure rise
• Gas flows default to zero in case of power loss

 

 

Full Automatic Control

• User-friendly, touchscreen interface
• Create/save multiple growth programs
• PC connection for data-logging

Intuitive interface of the touch screen

 

 

Front View Rear View Loading copper foil for graphene growth

 

Modes of Operation

Standard: Low pressure operation (below 20 Torr). Feedstock CH₄, Ar and H₂ process gases.

Options: Additional gas lines, dry/faster pumping systems, substrate thermocouples, atmospheric pressure operation.  

NanoCVD-G Systems are optimized for graphene growth.

The Raman spectrum above is of a graphene sample transferred onto a piece of oxidised silicon wafer.

 

Applications

Product development and education in:

• Electrodes for photovoltaics
• Touchscreen displays
• High-performance electronics
• Biological, chemical and mechanical sensors
• Electrical energy storage
• Graphene Research