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美国Trion 离子刻蚀与沉积系统

产品信息
Titan是一套用于半导体生产的十分紧凑、全自动化、带预真空室的等离子系统。

Titan具有反应离子刻蚀(RIE)配置、高密度电感耦合等离子沉积(HDICP)或等离子增强型化学汽相沉积(PECVD)配置。可对单个基片或带承片盘的基片(3”-300mm)进行处理。它还具有多尺寸批量处理功能。价格适宜且占地面积小。

美国Trion反应式离子刻蚀系统及沉积系统

Trion始于一九八九年的等离子刻蚀与沉积系统制造商,Trion为化合物半导体、MEMS(微机电系统)、光电器件以及其他半导体市场提供多种设备。我们的产品在业内以系统占地面积Z小、成本低而著称,且设备及工艺的可靠性和稳定性久经考验。从整套的批量生产用设备,到简单的实验室研发用系统,尽在Trion。 

批量生产用:
TITAN离子刻蚀与沉积系统:

Titan是一套用于半导体生产的十分紧凑、全自动化、带预真空室的等离子系统。

Titan具有反应离子刻蚀(RIE)配置、高密度电感耦合等离子沉积(HDICP)或等离子增强型化学汽相沉积(PECVD)配置。可对单个基片或带承片盘的基片(3”-300mm)进行处理。它还具有多尺寸批量处理功能。价格适宜且占地面积小。

刻蚀应用范围: 

砷化镓、砷化铝镓、氮化镓、磷化镓、磷化铟、铝、硅化物、铬以及其他要求腐蚀性和非腐蚀性化学刻蚀的材料。

沉积应用范围:
二氧化硅、氮化硅、氮氧化物和其他各种材料。

The United States Trion Technology

Reactive ion etching (RIE/ICP) system and deposition (PECVD) system

 

Founded in 1989 as a manufacturer of plasma etching and deposition systems, Trion supplies a wide range of devices to the compound semiconductor, MEMS(micro-electromechanical systems), optoelectronic devices, and other semiconductor markets.Our products are well known in the industry for their minimal system footprint and low cost, as well as the proven reliability and stability of equipment and processes.Trion has everything from a complete set of mass production equipment to a simple laboratory development system.

 

Mass production:

TITAN ion etching and deposition system:

 

Titan is a very compact, fully automated plasma system with a pre-vacuum chamber for semiconductor production.

 

Titan has reactive ion etching (RIE) configurations, high-density inductively coupled plasma deposition (HDICP), or plasma-enhanced chemical vapor deposition (PECVD) configurations.A single substrate or substrate (3 "-300mm) with a backing plate can be processed.It also has multi-dimensional batch processing capabilities.Affordable and small footprint.

 

Etching application:

Gallium arsenide, gallium arsenide, gallium nitride, gallium phosphate, indium phosphate, aluminum, silicides, chromium and other materials requiring corrosive and non-corrosive chemical etching.

 

Application range of sedimentation:

 

Silicon dioxide, silicon nitride, nitrogen oxides and various other materials.


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